Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-006-5479 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JANTX1N4984A, 200839074, 200839-074, LMZ120A, 1N5000B, 1N5000, 1N5097, 1N5000, 2504909531, 2504909-531, UZ929931, UZ9299-31, 1N4984 ECG5158A, MILS19500356, MILS19500-356, MILPRF19500356, MIL-PRF-19500/356, JAN1N4984, JANTX1N4984, 2510585, 4812000306REVA, 4812-0003-06REVA, 92511531B, 925115-31B, 4178600557, 4178600-557, 3227250P148, 322-7250P148, 3227250P148, 322-7250P148, SS4541, 5961-00-006-5479, 00-006-5479, 5961000065479, 000065479
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JUN 23, 1972 | 00-006-5479 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-006-5479
Part Number | Cage Code | Manufacturer |
---|---|---|
JANTX1N4984A | C7191 | ADELCO ELEKTRONIK GMBH |
200839-074 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
LMZ120A | 06751 | COMPONENTS INC SEMCOR DIV |
1N5000B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
1N5000 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
1N5097 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
1N5000 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
2504909-531 | 07187 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
UZ9299-31 | 12969 | MICRO USPD INC |
1N4984 ECG5158A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
MILS19500-356 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
MIL-PRF-19500/356 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JAN1N4984 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JANTX1N4984 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
2510585 | 53711 | NAVAL SEA SYSTEMS COMMAND |
4812-0003-06REVA | 15280 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV ES DEFENSIVE SYSTEMS DIVISION |
925115-31B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
4178600-557 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
322-7250P148 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
322-7250P148 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
SS4541 | 14099 | SEMTECH CORPORATION |
Technical Data | NSN 5961-00-006-5479
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
CURRENT RATING PER CHARACTERISTIC | AS10.00 MILLIAMPERES NOMINAL AND EA39.50 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF5.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.000 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
OVERALL DIAMETER | 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM |
FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 356 GOVERNMENT SPECIFICATION |