Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-006-9053 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JANTX1N4976A, JANTX1N4976, 196011P134, 1N4976, UZ929923, UZ9299-23, UZ756, MILS19500356, MIL-S-19500/356, MILPRF19500356, MIL-PRF-19500/356, JAN1N4976, JANTX1N4976, 10404009, 92511523B, 925115-23B, 4056304, 405630-4, SS4533, 152026400, 152-0264-00, 8482050023, 848205-0023, DSZ2063, 5961-00-006-9053, 00-006-9053, 5961000069053, 000069053
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 30, 1972 | 00-006-9053 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-006-9053
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX1N4976A | C7191 | ADELCO ELEKTRONIK GMBH |
| JANTX1N4976 | C7191 | ADELCO ELEKTRONIK GMBH |
| 196011P134 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 1N4976 | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
| UZ9299-23 | 12969 | MICRO USPD INC |
| UZ756 | 12969 | MICRO USPD INC |
| MIL-S-19500/356 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/356 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N4976 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N4976 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 10404009 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 925115-23B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 405630-4 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| SS4533 | 14099 | SEMTECH CORPORATION |
| 152-0264-00 | 80009 | TEKTRONIX, INC.DBA TEKTRONIX |
| 848205-0023 | 65597 | THALES DEFENSE & SECURITY, INC. |
| DSZ2063 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-00-006-9053
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 56.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | EA84.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF5.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 356 GOVERNMENT SPECIFICATION |