Part Details | DIGITAL MICROCIRCUIT
5962-00-194-0817 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".
Alternate Parts: SN54174JA, SN54174J, 542175005, 542-175-005, 542175005, 542-175-005, Q67000J478F9, Q67000-J478-F9, 2862311174, 28623-11174, DM54174J, S54174F, 8513411, 851341-1, 8513411, 851341-1, 8001071, 800107-1, SN54174J00, SN54174J-00, SN54174J, 352250019959, 10182345, 5962-00-194-0817, 00-194-0817, 5962001940817, 001940817
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | MAR 18, 1973 | 00-194-0817 | 31779 ( MICROCIRCUIT, DIGITAL ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-00-194-0817
Part Number | Cage Code | Manufacturer |
---|---|---|
SN54174JA | C7191 | ADELCO ELEKTRONIK GMBH |
SN54174J | C7191 | ADELCO ELEKTRONIK GMBH |
542-175-005 | C3141 | ELETTRONICA GMBH |
542-175-005 | A1997 | ELETTRONICA SPA |
Q67000-J478-F9 | D1180 | EPCOS AG ABT. PR ROE K PM |
28623-11174 | K0662 | LEONARDO MW LTD |
DM54174J | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
S54174F | 18324 | PHILIPS SEMICONDUCTORS INC |
851341-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
851341-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
800107-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
SN54174J-00 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
SN54174J | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
352250019959 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
10182345 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5962-00-194-0817
Characteristic | Specifications |
---|---|
OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
DESIGN FUNCTION AND QUANTITY | 6 FLIP-FLOP, CLOCKED AND 6 FLIP-FLOP, D-TYPE |
INPUT CIRCUIT PATTERN | 8 INPUT |
TIME RATING PER CHACTERISTIC | AEE30.00 NANOSECONDS MAXIMUM AND AED35.00 NANOSECONDS MAXIMUM |
OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
INCLOSURE CONFIGURATION | DUAL-IN-LINE |
INCLOSURE MATERIAL | CERAMIC AND GLASS |
CASE OUTLINE SOURCE AND DESIGNATOR | M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
BODY LENGTH | 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
BODY HEIGHT | 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
BODY WIDTH | 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
MAXIMUM POWER DISSIPATION RATING | 438.0 MILLIWATTS |
STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND EDGE TRIGGERED AND W/CLEAR AND W/ENABLE |